Micross has launched 1GB STT-MRAM discrete memory chips. They will be used for the aerospace industry.
Micross, an electronics company, today announced the release of a 1-gigabyte Magnetoresistive RAM (MRAM) component. This is many times denser magnetoresistive memory than previously proposed. The density of the STT-MRAM memory cells was increased by 64 times.
According to The Register, STT-MRAM Micross microcircuits are based on the technology of the American company Avalanche Technology. Although Samsung introduced a 1GB STT-MRAM nearly three years ago, Micross is credited with releasing a discrete 1GB STT-MRAM that is easy to use in electronics instead of NAND flash memory.
STT-MRAM operates over a wider temperature range (-40°C to 125°C). It can be rewritten almost indefinitely. Also, she is not afraid of radiation and temperature changes. This is especially useful in the aerospace industry and its harsh environment. Cell data is stored for up to 10 years.
The Register asked Micross for pricing information for the new parts, but the company did not respond at the time the article was published. Interested parties can contact the company through the company’s website.